Semiconductor device and method of fabricating the same
US11948994B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Jan 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having first and second active regions, first and second active patterns on the first and second active regions, first and second gate electrodes running across the first and second active patterns, and a high-k dielectric layer between the first active pattern and the first gate electrode and between the second active pattern and the second gate electrode. The first gate electrode includes a work function metal pattern and an electrode pattern. The second gate electrode includes a first work function metal pattern, a second work function metal pattern, and an electrode pattern. The first work function metal pattern contains the same impurity as that of the high-k dielectric layer. An impurity concentration of the first work function metal pattern of the second gate electrode is greater than that of the work function metal pattern of the first gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.