Methods for manufacturing semiconductor device
US11949040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2022 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Apr 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of diodes on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of diodes from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of diodes from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of diodes from the third substrate to the fourth substrate. The pitch between the plurality of diodes on the first substrate is different from the pitch of the first pattern array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.