Patent · US Active

Memory cell, capacitive memory structure, and methods thereof

US11950430B2 · kind B2 · utility

0Cited by

27References

18Claims

0Family size

Assignee

Ferroelectric Memory GmbH · DE

Inventors

Stefan Müller · Wetzlar, DE
Patrick Polakowski · Dresden, DE

Key dates

Filing date	Oct 30, 2020
Grant date	Apr 2, 2024
Priority date	—
Expiry date	Oct 30, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/121
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

According to various aspects, a memory cell is provided, the memory cell including: a first electrode; a second electrode; and a memory structure disposed between the first electrode and the second electrode, the first electrode, the second electrode, and the memory structure forming a memory capacitor, wherein at least one of the first electrode or the second electrode includes: a first electrode layer including a first material having a first microstructure; a functional layer in direct contact with the first electrode layer; and a second electrode layer in direct contact with the functional layer, the second electrode layer including a second material having a second microstructure different from the first microstructure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.