Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same
US11950519B2 · kind B2 · utility
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9References
18Claims
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Key dates
| Filing date | Dec 2, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Jun 30, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory cell includes a bottom electrode, a top electrode having a conductive material, a resistive layer interposed between the bottom electrode and the top electrode, and side portions covering sides of the top electrode and the resistive layer. The side portions contain an oxide of the conductive material. The non-volatile memory cell further includes a contact wire disposed on the top electrode. A width of the contact wire is less than a width between lateral outer surfaces of the side portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.