Substrate processing method, method for manufacturing semiconducor device, and plasma processing apparatus
US11955316B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Sep 29, 2020 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | May 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing method includes: providing a substrate including a first region and a second region into a chamber; forming a deposit film on the first region and the second region of the substrate by generating a first plasma from a first processing gas, and selectively etching the first region with respect to the second region by generating a second plasma from the second processing gas containing an inert gas. The first processing gas is a mixed gas including a first gas containing carbon atoms and fluorine atoms and a second gas containing silicon atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.