Differential hardmasks for modulation of electrobucket sensitivity
US11955377B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2022 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Jul 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Approaches based on differential hardmasks for modulation of electrobucket sensitivity for semiconductor structure fabrication, and the resulting structures, are described. In an example, a method of fabricating an interconnect structure for an integrated circuit includes forming a hardmask layer above an inter-layer dielectric (ILD) layer formed above a substrate. A plurality of dielectric spacers is formed on the hardmask layer. The hardmask layer is patterned to form a plurality of first hardmask portions. A plurality of second hardmask portions is formed alternating with the first hardmask portions. A plurality of electrobuckets is formed on the alternating first and second hardmask portions and in openings between the plurality of dielectric spacers. Select ones of the plurality of electrobuckets are exposed to a lithographic exposure and removed to define a set of via locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.