Patent · US Active

Metal pads over TSV

US11955445B2 · kind B2 · utility

2Cited by
222References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 9, 2022
Grant dateApr 9, 2024
Priority date
Expiry dateJun 9, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad having a larger diameter or surface area (e.g., oversized for the application) may be used when a contact pad is positioned over a TSV in one or both substrates.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.