Method for fabricating three-dimensional semiconductor device using buried stop layer in substrate
US11956958B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 22, 2021 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Apr 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a semiconductor device are disclosed. According to some aspects, a first implantation is performed on a first of a first semiconductor structure to form a buried stop layer in the first substrate. A second semiconductor device is formed. The first semiconductor structure and the second semiconductor device are bonded. The first substrate is thinned and the buried stop layer is removed, and an interconnect layer is formed above the thinned first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.