Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
US11961733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2021 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | May 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is included forming an oxide film on a substrate by alternately performing: forming the first oxide film containing an atom X by performing a first cycle including non-simultaneously performing forming a first layer including a component in which a first functional group is bonded to the atom X, and forming a second layer containing the atom X and oxygen by oxidizing the first layer; and forming the second oxide film containing the atom X by performing a second cycle including non-simultaneously performing forming a third layer including a component in which the first functional group is bonded to the atom X, and forming a fourth layer containing the atom X and oxygen by oxidizing the third layer, under a processing condition that an oxidizing power is higher than an oxidizing power when oxidizing the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.