SiC epitaxial wafer, production method therefor, and defect identification method
US11961736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2022 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Jun 22, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.01 defects/cm2 or more and 0.6 defects/cm2 or less. The large pit defect is a pit located on a surface at a position corresponding to a position of the carbon inclusion on the substrate surface, and a conversion rate from the substrate carbon inclusions to the large pit defects and the triangular defects caused by the substrate carbon inclusions is 20% or less. Also disclosed is a method for producing the SiC epitaxial wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.