Three-dimensional memory device without gate line slits and method for forming the same

US11963356B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Zongliang Huo · 红钢城街道, CN
• Haohao Yang · 红钢城街道, CN
• Wei Xu · Tangxia, CN
• Ping Yan · Nanhu, CN
• Pan Huang · 红钢城街道, CN
• Wenbin Zhou · Kunshan, CN

Key dates

• Filing date: Dec 20, 2021
• Grant date: Apr 16, 2024
• Expiry date: Jun 25, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35

Abstract

Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a stack structure including a memory block including a plurality of memory cells. The 3D memory device also includes a first top select structure and a bottom select structure in the memory block and aligned with each other vertically; and a second top select structure in the memory block is separated from the first top select structure by at least one of the plurality of memory cells. The first top select structure, the bottom select structure, and the second top select structure each includes an insulating material.