Substrate processing method, substrate processing apparatus using the same, and semiconductor device manufacturing method
US11965244B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 25, 2021 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Aug 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention disclosed herein relates to a substrate processing method, and more particularly, to: a substrate processing method in which a flow rate of a process gas in a depressurizing operation is regulated in a pressure changing process for improving properties of a thin film; a substrate processing apparatus using the substrate processing method; and a semiconductor manufacturing method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.