Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations

US11965266B2 · kind B2 · utility

Assignee

• FREIBERGER COMPOUND MATERIALS GMBH · DE

Inventors

• Stefan Eichler · Dresden, DE
• Michael Rosch · Allschwil, CH
• Dmitry Suptel · Dresden, DE
• Ulrich Kretzer · Chemnitz, DE
• Berndt Weinert · Freiberg, DE

Key dates

• Filing date: Jun 3, 2020
• Grant date: Apr 23, 2024
• Expiry date: Nov 25, 2040

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/42
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A device (1′, 1″, 1′″) for manufacturing III-V-crystals and wafers (14) manufactured therefrom, which are free of residual stress and dislocations, from melt (16) of a raw material optionally supplemented by lattice hardening dopants comprises a crucible (2′, 2″, 2′″) for receiving the melt (16) having a first section (4′, 4″) including a first cross-sectional area and a second section (6′) for receiving a seed crystal (12) and having a second cross-sectional area, wherein the second cross-sectional area is smaller than the first cross-sectional area and the first and second sections are connected with each other directly or via third section (8, 8′) which tapers from the first section towards the second section, in order to allow a crystallization starting from the seed crystal (12) within the directed temperature field (T) into the solidifying melt. The first section (4′, 4″) of the crucible (2′, 2″, 2′″) has a central axis (M), and the second section (6′) is arranged being offset (v) with regard to the central axis (M) of the first section (4′, 4″).