Stefan Eichler
18Patents
3h-index
23Co-inventors
60Inventor score
Filing activity: Dec 8, 2000 → Oct 10, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6355910B1 | Heating element for heating crucibles and arrangement of heating elements | Emerging Cross-Sectional Technologies | 8 | Expired |
| US9368585B2 | Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal | Emerging Cross-Sectional Technologies | 4 | Active |
| US7410540B2 | Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal | Chemistry; Metallurgy | 4 | Active |
| US10460924B2 | Process for producing a gallium arsenide substrate which includes marangoni drying | Emerging Cross-Sectional Technologies | 3 | Active |
| US8025729B2 | Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer | Emerging Cross-Sectional Technologies | 3 | Active |
| US9181633B2 | Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer | Emerging Cross-Sectional Technologies | 3 | Active |
| US8652253B2 | Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal | Emerging Cross-Sectional Technologies | 3 | Active |
| US9103048B2 | Device and process for producing poly-crystalline or multi-crystalline silicon; ingot as well as wafer of poly-crystalline or multi-crystalline silicon produced thereby, and use for the manufacture of solar cells | Emerging Cross-Sectional Technologies | 2 | Active |
| US8329295B2 | Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient | Emerging Cross-Sectional Technologies | 2 | Active |
| US8048224B2 | Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate | Emerging Cross-Sectional Technologies | 2 | Active |
| US11170989B2 | Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity | Emerging Cross-Sectional Technologies | 1 | Active |
| US8771560B2 | Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal | Chemistry; Metallurgy | 1 | Active |
| US9074297B2 | Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy | Emerging Cross-Sectional Technologies | 1 | Active |
| US11965266B2 | Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations | Chemistry; Metallurgy | 0 | Active |
| US8815392B2 | Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient | Emerging Cross-Sectional Technologies | 0 | Active |
| US12205815B2 | Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity | Emerging Cross-Sectional Technologies | 0 | Active |
| US9856579B2 | Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy | Emerging Cross-Sectional Technologies | 0 | Active |
| US11505847B2 | Method and apparatus for Ga-recovery | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.