System and method to adjust a kinetics model of surface reactions during plasma processing
US11966203B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2020 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Jan 25, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F17/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.