System and method for current controlled nanowire memory device
US11967350B1 · kind B1 · utility
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5References
12Claims
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Key dates
| Filing date | Jan 31, 2022 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Jun 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system and method for a memory device is disclosed. A substrate is provided. A nucleation pad is disposed over the substrate. A nanowire is disposed substantially perpendicular, about a center of the nucleation pad. A charge current is selectively passed through the substrate to nucleate a magnetic vortex in the nucleation pad, the magnetic vortex indicative of a magnetic domain and a direction of the magnetic vortex indicative of a polarity of the magnetic domain. A shift current is applied through the nanowire to shift the magnetic domain into the nanowire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.