Method of depositing thin film and method of manufacturing semiconductor device using the same
US11967503B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2021 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Feb 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are a method of depositing a thin film and a method of manufacturing a semiconductor device using the same, and the method of depositing a thin film uses a substrate processing apparatus including a chamber, a substrate support on which a substrate is mounted, a gas supply unit, and a power supply unit that supplies high-frequency and low-frequency power to the chamber, and includes: a step of mounting, on the substrate support, the substrate including a lower thin film deposited under the condition of a process temperature in a low temperature range; a step of depositing an upper thin film on the lower thin film under the condition of the process temperature in the low temperature range; and a step of treating a surface of the upper thin film under the condition of the process temperature in the low temperature range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.