Power semiconductor device
US11967584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2019 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Sep 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device includes an insulating substrate on which a first conductor layer is arranged on one surface, a first conductor that is connected to the first conductor layer via a first connecting material, and a semiconductor element that is connected to the first conductor via a first connecting material. When viewed from a direction perpendicular to an electrode surface of the semiconductor element, the first conductor includes a peripheral portion formed larger than the semiconductor element. A first recess is formed in the peripheral portion so that a thickness of the first connecting material becomes thicker than other portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.