Vertical silicon carbide power MOSFET and IGBT and a method of manufacturing the same
US11967616B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 22, 2019 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Jan 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
Abstract
Disclosed is a vertical silicon carbide power MOSFET with a 4H-SiC substrate of n+-type as drain and a 4H-Si C epilayer of n−-type, epitaxially grown on the 4H-SiC substrate acting as drift region and a source region of p++-type, a well region of p-type, a channel region of p-type and a contact region of n++-type implanted into the drift region and a metal gate insulated from the source and drift region by a gate-oxide. A high mobility layer with a vertical thickness in a range 0.1 nm to 50 nm exemplarily in the range of 0.5 nm to 10 nm is provided at the interface between the 4H-SiC epilayer and the gate-oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.