Source/drain contact having a protruding segment
US11968817B2 · kind B2 · utility
0Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2022 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Jul 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.