Inventor · Baoshan, TW

Ping-Wei Wang

162Patents
21h-index
92Co-inventors
93Inventor score

Filing activity: Jan 19, 1989 → Jun 14, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8004042B2 Static random access memory (SRAM) cell and method for forming same Electricity 175 Active
US6924560B2 Compact SRAM cell with FinFET Emerging Cross-Sectional Technologies 143 Expired
US5153880A Field-programmable redundancy apparatus for memory arrays Physics 113 Expired
US7074656B2 Doping of semiconductor fin devices Electricity 98 Expired
US5572054A Method of operating a single transistor non-volatile electrically alterable semiconductor memory device Electricity 88 Expired
US8294212B2 Methods and apparatus for SRAM bit cell with low standby current, low supply voltage and high speed Electricity 76 Active
US4980859A NOVRAM cell using two differential decouplable nonvolatile memory elements Physics 75 Expired
US5161157A Field-programmable redundancy apparatus for memory arrays Physics 58 Expired
US5432748A Solid state peripheral storage device Physics 55 Expired
US5500826A Solid state peripheral storage device Physics 50 Expired
US5003197A Substrate bias voltage generating and regulating apparatus Electricity 44 Expired
US5386158A Sensing circuit for a floating gate memory device Physics 36 Expired
US7223673B2 Method of manufacturing semiconductor device with crack prevention ring Electricity 27 Expired
US5226006A Write protection circuit for use with an electrically alterable non-volatile memory card Physics 25 Expired
US10050045B1 SRAM cell with balanced write port Electricity 25 Active
US5369609A Floating gate memory array with latches having improved immunity to write disturbance, and with storage latches Physics 25 Expired
US8315085B1 SRAM timing tracking circuit Physics 24 Active
US5475634A Floating gate memory array with latches having improved immunity to write disturbance, and with storage latches Physics 22 Expired
US9620509B1 Static random access memory device with vertical FET devices Physics 22 Active
US5191232A High frequency voltage multiplier for an electrically erasable and programmable memory device Electricity 21 Expired
US5910914A Sensing circuit for a floating gate memory device having multiple levels of storage in a cell Physics 21 Expired
US5289411A Floating gate memory array device having improved immunity to write disturbance Physics 20 Expired
US5359570A Solid state peripheral storage device Physics 20 Expired
US7773407B2 8T low leakage SRAM cell Physics 14 Active
US5780342A Method for fabricating dielectric films for non-volatile electrically erasable memories Electricity 14 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.