Patent · US Active

Composition, its use and a process for selectively etching silicon-germanium material

US11970647B2 · kind B2 · utility

0Cited by

4References

18Claims

0Family size

Assignee

BASF SE

Inventors

Francisco Javier Lopez Villanueva · Schifferstadt, DE
Yeni Burk · Ludwigshafen, DE
Daniel LOEFFLER · Ludwigshafen, DE
Jan Ole Mueller
Marcel Brill · Ludwigshafen, DE
Patrick Wilke · Ludwigshafen, DE
Jean-Pierre Berkan Lindner · Mannheim, DE
Volodymyr Boyko · Mannheim, DE

Key dates

Filing date	Jun 19, 2020
Grant date	Apr 30, 2024
Priority date	—
Expiry date	Aug 22, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32134
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Described herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition including:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.