Imaging ellipsometry (IE)-based inspection method and method of fabricating semiconductor device by using IE-based inspection method
US11972960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2020 |
| Grant date | Apr 30, 2024 |
| Priority date | — |
| Expiry date | Dec 8, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is an imaging ellipsometry (IE)-based inspection method including selecting a mode from among a first mode of an IE-based inspection device having a first field of view (FOV) and a second mode of an IE-based inspection device having a second FOV, measuring an inspection target by the IE-based inspection device based on the selected mode, and determining whether the inspection target is normal based on a result of the measuring, wherein the measuring of the inspection target comprises simultaneously measuring patterns included in a plurality of cells provided in a region of the inspection target, the region corresponding to an FOV of the selected mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.