Process for producing semiconductor wafers

US11972986B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Michael Boy · Waging am See, DE
• Christina Kruegler · Dietersburg, DE

Key dates

• Filing date: Mar 13, 2019
• Grant date: Apr 30, 2024
• Expiry date: Jun 29, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0201
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Semiconductor wafers are produced by a process wherein a single-crystal ingot of semiconductor material is pulled and at least one wafer is removed from the ingot, wherein the wafer is subjected to a thermal treatment comprising a heat treatment step in which a radial temperature gradient acts on the wafer, wherein an analysis of the wafer of semiconductor material with respect to the formation of defects in the crystal lattice, so-called stress fields, is carried out.