Integrated circuit including transistors and a method of manufacturing the same
US11973142B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 16, 2022 |
| Grant date | Apr 30, 2024 |
| Priority date | — |
| Expiry date | Aug 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes transistors respectively including channel layers in a substrate, source electrodes and drain electrodes respectively contacting both sides of the channel layers, gate electrodes on the channel layers, and ferroelectrics layers between the channel layers and the gate electrodes. Electrical characteristics of the ferroelectrics layers of at least two of the transistors are different. Accordingly, threshold voltages of the transistors are different from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.