Non-volatile memory with intentional overprogramming to improve short term data retention issue
US11978507B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2022 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Aug 23, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To remedy short term data retention issues, a non-volatile memory performs a multi-pass programming process to program data into a set of non-volatile memory cells and identifies non-volatile memory cells that experienced downward threshold voltage drift after a first pass of the multi-pass programming process and prior to a final pass of the multi-pass programming process. The final pass of the multi-pass programming process comprises programming non-volatile memory cells not identified to have experienced the downward threshold voltage drift to a set of final target threshold voltages and purposefully overprogramming non-volatile memory cells identified to have experienced the downward threshold voltage drift to threshold voltages greater than respective final target threshold voltages by one or more offsets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.