Power semiconductor module arrangement

US11978700B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Olaf Hohlfeld · Warstein, DE
• Peter Kanschat · Soest, DE

Key dates

• Filing date: Jul 25, 2022
• Grant date: May 7, 2024
• Expiry date: Jul 25, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/1815
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor module arrangement includes two or more individual semiconductor devices arranged on a base layer. Each semiconductor device includes a lead frame, a semiconductor body arranged on the lead frame, and a molding material enclosing the semiconductor body and at least part of the lead frame. A frame is arranged on the base layer such that the frame surrounds the two or more individual semiconductor devices. A casting compound at least partly fills a capacity formed by the base layer and the frame, such that the casting compound at least partly encloses the two or more individual semiconductor devices.