Electronic device image sensor
US11978756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2020 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Jul 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
An electronic device includes a substrate semiconductor wafer with semiconductor portions separated from one another by through-passages. Electronic circuits and a dielectric layer with a network of electrical connections are formed at a front face of the substrate semiconductor wafer. Electrically conductive fillings are contained within the through-passages and are connected to the network of electrical connections. Interior dielectric layers for anti-diffusion protection are provided in the through-passages between the electrically conductive fillings and the semiconductor portions. Back side dielectric layers are joined to the interior dielectric layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.