Superlattice photo detector
US11978814B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2021 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Jan 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/953
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photo detector includes a superlattice with an undoped first semiconductor layer including undoped intrinsic semiconductor material, a doped second semiconductor layer having a first conductivity type on the first semiconductor layer, an undoped third semiconductor layer including undoped intrinsic semiconductor material on the second semiconductor layer, and a fourth semiconductor layer having a second opposite conductivity type on the third semiconductor layer, along with a first contact having the first conductivity type in the first, second, third, and fourth semiconductor layers, and a second contact having the second conductivity type and spaced apart from the first contact in the first, second, third, and fourth semiconductor layers. An optical shield on a second shielded portion of a top surface of the fourth semiconductor layer establishes electron and hole lakes. A packaging structure includes an opening that allows light to enter an exposed first portion of the top surface of the fourth semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.