Image sensing device with event based vision sensor pixels and imaging pixels
US11979675B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2022 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Sep 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/75
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Image sensing devices are disclosed. In one example, an image sensing device includes a pixel unit cell with both event sensing (EVS) pixels and imaging pixels. The EVS and imaging pixels are configured to include event sensing and imaging pixel transistors formed in the same transistor layer of an integrated circuit assembly that also includes the photodiodes of the EVS and imaging pixels. The photodiodes are separated by a rear deep trench isolation (RDTI), and the EVS and imaging pixel transistors are arranged along (e.g., underneath) boundary areas formed by the RDTI, maximizing the space available for the photodiodes and economizing on wiring requirements for the EVS and imaging pixels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.