Inventor · Webster, NY, US

Frederick Brady

51Patents
12h-index
45Co-inventors
84Inventor score

Filing activity: Apr 30, 1993 → Aug 3, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6660564B2 Wafer-level through-wafer packaging process for MEMS and MEMS package produced thereby Electricity 134 Expired
US7859033B2 Wafer level processing for backside illuminated sensors Electricity 105 Active
US5358879A Method of making gate overlapped lightly doped drain for buried channel devices Emerging Cross-Sectional Technologies 89 Expired
US5360752A Method to radiation harden the buried oxide in silicon-on-insulator structures Emerging Cross-Sectional Technologies 39 Expired
US5314841A Method of forming a frontside contact to the silicon substrate of a SOI wafer Electricity 31 Expired
US7763913B2 Imaging method, apparatus, and system providing improved imager quantum efficiency Electricity 26 Active
US6841861B2 MEMS package Electricity 24 Expired
US5527724A Method to prevent latch-up and improve breakdown volatge in SOI mosfets Emerging Cross-Sectional Technologies 23 Expired
US7915067B2 Backside illuminated image sensor with reduced dark current Electricity 15 Active
US6034399A Electrostatic discharge protection for silicon-on-insulator Electricity 15 Expired
US8119435B2 Wafer level processing for backside illuminated image sensors Electricity 12 Active
US6665161B1 Semiconductor circuit having increased susceptibility to ionizing radiation Electricity 12 Expired
US8017426B2 Color filter array alignment mark formation in backside illuminated image sensors Electricity 11 Active
US8076170B2 Backside illuminated image sensor with shallow backside trench for photodiode isolation Electricity 10 Active
US6399989B1 Radiation hardened silicon-on-insulator (SOI) transistor having a body contact Electricity 9 Expired
US8847136B2 Conversion gain modulation using charge sharing pixel Electricity 7 Active
US9398237B2 Image sensor with floating diffusion interconnect capacitor Electricity 6 Active
US7821046B2 Methods, structures and sytems for an image sensor device for improving quantum efficiency of red pixels Electricity 6 Active
US8953075B2 CMOS image sensors implementing full frame digital correlated double sampling with global shutter Electricity 5 Active
US7432121B2 Isolation process and structure for CMOS imagers Electricity 4 Active
US6441440B1 Semiconductor device and circuit having low tolerance to ionizing radiation Electricity 4 Expired
US6762128B2 Apparatus and method for manufacturing a semiconductor circuit Electricity 4 Expired
US6794733B1 Increasing the susceptability of an integrated circuit to ionizing radiation Emerging Cross-Sectional Technologies 4 Expired
US11240449B2 Solid-state imaging device and imaging device with combined dynamic vision sensor and imaging functions Electricity 3 Active
US6638832B2 Elimination of narrow device width effects in complementary metal oxide semiconductor (CMOS) devices Electricity 2 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.