Wide-base magnetic tunnel junction device with sidewall polymer spacer

US11980039B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Nathan P. Marchack · White Plains, US
• Chandrasekharan Kothandaraman · New York, US
• Pouya Hashemi · White Plains, US

Key dates

• Filing date: Jun 16, 2021
• Grant date: May 7, 2024
• Expiry date: Apr 29, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

A semiconductor device including a second magnetic tunnel junction stack aligned above a spin conductor layer above a first magnetic junction stack, a sidewall dielectric surrounding the second magnetic tunnel junction stack, a vertical side surface of the sidewall dielectric is aligned with vertical side surfaces of the spin conductor layer and the first magnetic junction stack. A method including forming a first magnetic tunnel junction stack, a spin conductor layer and a second magnetic tunnel junction stack, patterning the second magnetic tunnel junction stack, while not patterning the spin conductor layer and the first magnetic tunnel junction stack, forming a sidewall dielectric and a polymer layer on the sidewall dielectric. A method including patterning a second magnetic tunnel junction stack, while not patterning a spin conductor layer below the second magnetic tunnel junction stack nor a first magnetic tunnel junction stack below the spin conductor layer.