Stress-isolated MEMS device comprising substrate having cavity and method of manufacture
US11981560B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2021 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Jun 8, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.