Crystal growth doping apparatus and crystal growth doping method
US11982019B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2022 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Jan 19, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1056
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystal growth doping apparatus and a crystal growth doping method are provided. The crystal growth doping apparatus includes a crystal growth furnace and a doping device that includes a feeding tube inserted to the furnace body along an oblique insertion direction, and a storage cover and a gate tube that are disposed in the feeding tube. The feeding tube extends from an outer surface thereof to form a placement opening, and the placement opening is recessed from an edge thereof to form an upper recessed portion and a lower recessed portion along the oblique insertion direction. The storage cover includes a storage tank and a handle. When the storage cover is disposed in the gate tube body, the gate tube body is configured to isolate an inner space of the feeding tube from the placement opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.