Patent · US Active

Photomask and method of fabricating a photomask

US11982936B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 2022
Grant dateMay 14, 2024
Priority date
Expiry dateJun 30, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/68
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.