Nonvolatile memory device and storage device including the nonvolatile memory device
US11984170B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2023 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Jan 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06506
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes a first memory chip and a second memory chip connected to a controller through the same channel. The first memory chip generates a first signal from a first internal clock signal based on a clock signal received from the controller. The second memory chip generates a second signal from a second internal clock signal based on the clock signal, and performs a phase calibration operation on the second signal on the basis of a phase of the first signal by delaying the second internal clock signal based on a phase difference between the first and second signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.