Apparatus and method for plasma etching
US11984304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2021 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Aug 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.