EUV patterning methods, structures, and materials
US11984317B2 · kind B2 · utility
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Key dates
| Filing date | May 5, 2021 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Nov 13, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Techniques, structures, and materials related to extreme ultraviolet (EUV) lithography are discussed. Multiple patterning inclusive of first patterning a grating of parallel lines and second patterning utilizing EUV lithography to form plugs in the grating, and optional trimming of the plugs may be employed. EUV resists, surface treatments, resist additives, and optional processing inclusive of plug healing, angled etch processing, electric field enhanced post exposure bake are described, which provide improved processing reliability, feature definition, and critical dimensions.
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