Semiconductor device
US11984448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2021 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Jul 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a first base fin protruding from the substrate and extending in a first direction, and a first fin type pattern protruding from the first base fin and extending in the first direction. The first base fin includes a first sidewall and a second sidewall, the first and second sidewalls extending in the first direction, the first sidewall opposite to the second sidewall, the first sidewall of the first base fin at least partially defines a first deep trench, the second sidewall of the first base fin at least partially defines a second deep trench, and a depth of the first deep trench is greater than a depth of the second deep trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.