Memristor and neuromorphic device comprising the same
US11985910B2 · kind B2 · utility
0Cited by
8References
21Claims
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Assignee
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Key dates
| Filing date | Jun 9, 2022 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Aug 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8416
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.