Forming optical components using selective area epitaxy
US11988868B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 2021 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Nov 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A mask material is deposited on a substrate or growth template. The substrate or growth template is compatible with crystalline growth of a crystalline optical material. Patterned portions of the mask material are removed to expose one or more regions of the substrate or growth template. The one or more regions have target shapes of one or more optical components. The crystalline optical material is selectively grown in the one or more regions to form the one or more optical components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.