Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap
US11990257B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 2020 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Jan 15, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process is provided for forming an integrated thin film resistor (TFR) in an integrated circuit (IC) device including IC elements and IC element contacts. A TFR film layer and TFR dielectric layer are formed over the IC structure, and a wet etch is performed to define a dielectric cap with sloped lateral edges over the TFR film layer. Exposed portions of the TFR film layer are etched to define a TFR element. A TFR contact etch forms contact openings over the TFR element, and a metal layer is formed to form metal layer connections to the IC element contacts and the TFR element. The sloped edges of the dielectric cap may improve the removal of metal adjacent the TFR element to prevent electrical shorts in the completed device. A TFR anneal to reduce a TCR of the TFR is performed at any suitable time before forming the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.