Semiconductor device with fine metal lines for BEOL structure and method of manufacturing the same
US11990409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2021 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Mar 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a front-end-of-line (FEOL) structure and a back-end-of-line (BEOL) structure connected to the FEOL structure, wherein the FEOL structure includes at least one source/drain region and at least one gate structure, and the BEOL structure includes: a plurality of 1st fine metal lines arranged in a row with a same pitch, each of the plurality of 1st fine metal lines having a same width; and at least one 1st wide metal line formed at a side of the plurality of 1st fine metal lines, the 1st wide metal line having a width greater than the width of the 1st fine metal line, and wherein each of the plurality of 1st fine metal lines includes a material different from a material included in the 1st wide metal line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.