Hoonseok Seo
12Patents
0h-index
11Co-inventors
34Inventor score
Filing activity: Oct 9, 2020 → Mar 8, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12317582B2 | Integrated circuit devices including a metal resistor and methods of forming the same | Electricity | 0 | Active |
| US12218054B2 | Method of forming an integrated circuit device having an etch-stop layer between metal wires | Electricity | 0 | Active |
| US12142564B2 | Backside power distribution network semiconductor package and method of manufacturing the same | Electricity | 0 | Active |
| US12014951B2 | Semi-damascene structure with dielectric hardmask layer | Electricity | 0 | Active |
| US11990409B2 | Semiconductor device with fine metal lines for BEOL structure and method of manufacturing the same | Electricity | 0 | Active |
| US11881455B2 | Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same | Electricity | 0 | Active |
| US11769728B2 | Backside power distribution network semiconductor package and method of manufacturing the same | Electricity | 0 | Active |
| US12230571B2 | Integrated circuit devices including a power rail and methods of forming the same | Electricity | 0 | Active |
| US11488864B2 | Self-aligned supervia and metal direct etching process to manufacture self-aligned supervia | Electricity | 0 | Active |
| US12125788B2 | Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same | Electricity | 0 | Active |
| US12243820B2 | Semiconductor device with fine metal lines for BEOL structure and method of manufacturing the same | Electricity | 0 | Active |
| US11450608B2 | Integrated circuit devices including metal wires having etch stop layers on sidewalls thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.