Semiconductor memory device with different fluorine concentrations in sub conductive layers
US11990417B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2021 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Jul 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a first insulating layer, a first conductive layer, a first pillar, a second pillar, and a second insulating layer. The first conductive layer contains tungsten. The first conductive layer includes a first sub conductive layer and a second sub conductive layer. The first pillar and the second pillar pass through the first insulating layer and the first conductive layer. The second insulating layer divides the first insulating layer and the first conductive layer. The first sub conductive layer is in contact with the second sub conductive layer and is provided between the second sub conductive layer and the first insulating layer. A fluorine concentration in the first sub conductive layer is lower than that in the second sub conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.