Patent · US Active

Semiconductor package including under bump metallization pad

US11990439B2 · kind B2 · utility

1Cited by
10References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 10, 2021
Grant dateMay 21, 2024
Priority date
Expiry dateJun 24, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/0401
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor package including a semiconductor chip; a lower redistribution layer on a lower surface of the semiconductor chip; a lower passivation layer on a lower surface of the lower redistribution layer; a UBM pad on the lower passivation layer and including an upper pad and a lower pad connected to the upper pad, the upper pad having a greater horizontal length at an upper surface thereof than a horizontal length at a lower surface thereof; a seed layer between the lower passivation layer and the UBM pad; and an external connecting terminal on a lower surface of the UBM pad, wherein the seed layer includes a first seed part covering a side surface of the upper pad, a second seed part covering a portion of the lower surface of the upper pad, and a third seed part covering a portion of a side surface of the lower pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.