Patent · US Active

MOSFET-based RF switch with improved ESD robustness

US11990468B2 · kind B2 · utility

0Cited by

1References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Valentyn Solomko · Munich, DE
Semen Syroiezhin · Erlangen, DE
Mirko Scholz · Leuven, BE

Key dates

Filing date	Aug 23, 2022
Grant date	May 21, 2024
Priority date	—
Expiry date	Aug 23, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/811
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

An RF switch device includes transistors coupled in series forming an RF conductive current path; a first resistive bias network forming a DC conductive bias path between gate nodes of the plurality of transistors; and a first ESD bias component coupled between the RF conductive current path and the first resistive bias network, wherein the first ESD bias component provides a DC conductive path between the RF conductive current path of the RF switch device and the first resistive bias network during an ESD event.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.