Image sensor device with reflective structure
US11990493B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2022 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Jun 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.