High voltage transistor structure

US11990507B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Chin-Hung Chen · Tainan, TW
• Ssu-I Fu
• Chih-Kai Hsu · Tainan, TW
• Chun-Ya Chiu · Tainan, TW
• Chia-Jung Hsu · Hsinchu, TW
• Yu-Hsiang Lin · Yuanchang, TW

Key dates

• Filing date: Aug 16, 2021
• Grant date: May 21, 2024
• Expiry date: Dec 21, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A high voltage transistor structure including a substrate, a first isolation structure, a second isolation structure, a gate structure, a first source and drain region, and a second source and drain region is provided. The first isolation structure and the second isolation structure are disposed in the substrate. The gate structure is disposed on the substrate, at least a portion of the first isolation structure, and at least a portion of the second isolation structure. The first source and drain region and the second source and drain region are located in the substrate on two sides of the first isolation structure and the second isolation structure. The depth of the first isolation structure is greater than the depth of the second isolation structure.