Semiconductor devices
US11990552B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2021 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Mar 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device includes an active pattern which includes a lower pattern, and a sheet pattern that is spaced apart from the lower pattern in a first direction, a gate structure on the lower pattern that includes a gate electrode that surrounds the sheet pattern, the gate electrode extending in a second direction that is perpendicular to the first direction, and a source/drain pattern on the lower pattern and in contact with the sheet pattern. A contact surface between the sheet pattern and the source/drain pattern has a first width in the second direction, and the sheet pattern has a second width in the second direction that is greater than the first width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.